Samsung pushes High-NA EUV adoption to 2030 for 1 nm chips

Samsung Foundry is expected to adopt High-NA EUV lithography with its 1 nm node, scheduled for 2030, according to ZDNet Korea. The company has continued upgrading its chip-making equipment but has not yet committed to ASML’s newer High-NA EUV tools, relying instead on existing Low-NA EUV systems that are still delivering competitive results.

The timing would place Samsung among the later adopters of High-NA EUV for leading-edge semiconductor production. Intel is gradually scaling up its 14A node to risk production with High-NA EUV tools, while TSMC is expected to introduce the technology in 2029.

Samsung’s slower move does not necessarily signal urgency or weakness. TSMC has argued that Low-NA EUV can continue supporting node scaling and generational improvements, while also avoiding the higher cost of premier High-NA EUV systems. Samsung appears to be taking a similar path by extending the usefulness of current lithography tools before making the transition.