Samsung and Broadcom deepen chip collaboration

Samsung Electronics and Broadcom signed a memorandum of understanding to expand strategic collaboration across memory and foundry technologies for next-generation AI infrastructure. The agreement was announced during the AI Summit at The Midway in San Francisco, with Jinman Han, Hock Tan, senior executives from both companies and representatives of the Korean government in attendance.

The memory work centers on supplying High Bandwidth Memory (HBM) for Broadcom’s next-generation AI accelerators. On the foundry side, the partnership will focus on Samsung’s 2-nanometer (nm) and below process technologies for Broadcom products, including Wireless Broadband Communications (WBC) solutions.

The companies also plan to extend the collaboration into advanced packaging based on Samsung’s 2 nm process. That includes 2.3D and 2.5D integration aimed at enabling higher-performance and more power-efficient AI and networking silicon.