Samsung to use TSMC for Nvidia custom memory base dies

Samsung Electronics will reportedly use TSMC’s 3-nanometre process to manufacture the base logic dies for Nvidia’s next-generation custom high-bandwidth memory. Reuters reported the plan, citing a Seoul newspaper. The arrangement would place a key memory component on TSMC’s advanced logic manufacturing capacity rather than relying on memory production capacity alone.

Routing those dies through TSMC could improve base-die performance and integration with CoWoS advanced packaging, while tying HBM availability more closely to foundry allocation. Supply planning from 2027 onward may therefore need to account for access to TSMC N3 capacity alongside DRAM manufacturing constraints.

Separately, TSMC confirmed plans for another 3nm fab in Tainan, with production scheduled for 1H 2028. It maintained 2026 capital expenditure at $60–64B and said demand still far exceeds supply capacity. Construction of its second Arizona fab is complete, with mass production brought forward to Q3 2027.