Samsung prepares HBM4E memory running at 16 Gbps per pin

Samsung’s Sangwook Han confirmed at the Hot Chips 2026 conference’s Advance Program that the company is preparing to ship HBM4E memory with speeds of 16 Gbps per pin. The update points to continued scaling progress for Samsung’s Semiconductor division, which has been shipping HBM4E at 14 Gbps per pin since late May of this year. Samsung’s HBM4 is now shipping at 11.7 Gbps, making HBM4E a notable step up in performance.

At 14 Gbps per pin and 2,048 pins per HBM4E stack, Samsung can reach a maximum bandwidth of 3.6 TB/s. Moving to 16 Gbps raises maximum memory bandwidth to 4 TB/s for a single HBM4E stack, with total bandwidth rising further in systems using about a dozen memory stacks per AI accelerator or GPU. Samsung currently offers HBM4E in a 12-layer (or 12-high) configuration with 48 GB per stack, with future customer requirements expected to include 8-layer 32 GB and 16-layer 64 GB stacks.