Samsung develops 40 Gbps GDDR7 memory with 3 GB capacity

At the 2025 Korea Tech Festival in Seoul, Samsung showcased a next-generation GDDR7 memory chip that earned a presidential recognition medal. The device is built on Samsung’s 12 nm (10 nm class) DRAM node, operates at 40 Gbps and offers 3 GB (24 Gb) of capacity per chip. Samsung positioned the component for the next generation of graphics cards, highlighting both the raw data rate and the unusual per-chip capacity.

The announcement follows Samsung’s recent sampling of GDDR7 that runs at 36 Gbps and the company’s ongoing mass production of 28 Gbps 3 GB modules. The South Korean company confirmed those 28 Gbps 3 GB parts are in mass production and suggested they are likely intended for NVIDIA’s mid-cycle SUPER refresh of GeForce RTX 50-series GPUs. The report underscores a practical distinction between sampling and mass production: sampling alone is generally insufficient for a product rollout, and manufacturers prefer chips that are already in mass production for immediate use.

Industry observers noted that 3 GB modules are uncommon, so confirmation that Samsung is mass producing 3 GB parts, starting at 28 Gbps, expands higher-speed VRAM options. At the same time, Samsung’s testing of 40 Gbps GDDR7 modules with 3 GB capacity raises questions about where those higher-speed chips will be deployed. Ensuring a proper supply will be a key factor for any vendor planning to adopt these parts, since ample inventory of GDDR7 chips must accumulate before large-scale product launches.