Micron demonstrates 512 GB DDR5 server memory

Micron Technology has demonstrated what it describes as the world’s first 512 GB DDR5 module across multiple server platforms, targeting enterprise data center and cloud systems running demanding AI, analytics, in-memory database and simulation-heavy workloads. AMD and Intel are actively validating the module, which is expected to deliver speeds up to 9,200 MT/s.

The capacity comes from Micron’s vertical interconnect packaging approach, which stacks DRAM dies linked by through-silicon vias (TSVs). The design is intended to increase density inside individual DRAM packages while maintaining the performance requirements of modern data center architectures. The module enables up to 12 TB of DDR5 DRAM in a single 24-slot dual-socket server.