Applied Materials and Micron expand partnership on next generation memory for AI

Applied Materials and Micron Technology are expanding their collaboration to co-develop next generation DRAM, high bandwidth memory and NAND solutions targeted at improving the energy efficient performance of artificial intelligence systems. The effort focuses on combining advanced research and development capabilities from Applied Materials’ EPIC Center in Silicon Valley with Micron’s innovation center in Boise, Idaho to reinforce the domestic semiconductor innovation pipeline.

The companies are building on a long standing partnership centered on materials engineering and manufacturing innovation to push the performance and efficiency of advanced memory chips. By jointly working on new memory architectures and process technologies, the partners aim to support increasingly demanding artificial intelligence workloads that require higher bandwidth, lower power consumption and greater scalability.

Applied Materials president and chief executive officer Gary Dickerson highlighted that Micron is joining as a founding partner at the EPIC Center, underscoring a deeper level of collaboration between the two firms. Dickerson emphasized that next generation memory technologies are becoming a vital component in the future of artificial intelligence systems and that closer integration of equipment, materials and device expertise is intended to accelerate their development and deployment.