CXMT weighs second Beijing fab to expand DRAM output

Chinese memory maker CXMT is reportedly considering a second DRAM fab in Beijing and has begun talks to secure funding for the project. The company is seeking to increase DRAM wafer output amid strong demand for its memory products, with local government backing reportedly supporting the production push.

CXMT currently operates two 12-inch fabs, one in Hefei and one in Beijing, with each fab having an output of about 100,000 WPM. Its current capacity is around 200,000 wafers per month, with plans to triple output to 600,000 WPM once planned Shanghai and Hefei plants are completed and fully operational. CXMT is expected to end the year 2026 with about 350,000 WPM of DRAM output, trailing Micron’s 375,000 DRAM WPM output.