Micron samples 256 GB DDR5 9200 MT/s RDIMM server modules

Micron has started sampling 256 GB DDR5 registered dual in-line memory modules to key server ecosystem enablers. The module is built on the company’s 1-gamma technology, which is capable of speeds up to 9,200 megatransfers per second (MT/s), greater than 40% faster than modules in volume production today.

The design uses advanced packaging techniques, including 3D stacking (3DS) of multiple memory dies connected by through-silicon vias (TSVs). Combined with Micron’s 1-gamma DRAM, these features are intended to deliver the capacity, speed and power efficiency needed to scale next-generation Artificial Intelligence systems and support modern data center workloads.

Micron said a single 256 GB module can reduce operating power by more than 40% versus two 128 GB modules, enabling greater efficiency for modern Artificial Intelligence data centers. The company is collaborating with key ecosystem enablers to validate the 256 GB 1-gamma DDR5 RDIMM across their respective current and next-generation server platforms.

That co-validation effort is aimed at ensuring broad platform compatibility and accelerating the path to production deployment for data center customers building Artificial Intelligence and HPC infrastructure at scale. The announcement centers on early sampling and ecosystem validation as Micron works to position the module for broader server adoption.