Samsung HBM4E clears testing for NVIDIA Rubin Ultra

Samsung’s upcoming HBM4E memory has reportedly passed testing for NVIDIA’s next-generation Rubin Ultra AI GPU accelerator family, potentially putting the company back in contention for high-bandwidth memory supply after its HBM3E did not meet NVIDIA’s requirements. NVIDIA previously selected Samsung for GDDR7 only rather than HBM3E, making the new qualification an important step for Samsung’s memory business.

The HBM4E design is currently running at 14 Gbps per pin with 2,048 pins per stack. Samsung can reach maximum bandwidth of 3.6 TB/s, while operation at 16 Gbps would lift bandwidth to 4 TB/s for a single HBM4E stack. The company is offering a 12-layer, or 12-high, configuration with 48 GB of memory per stack, while future customer requirements are expected to include 8-layer 32 GB and 16-layer 64 GB stacks.