Samsung plans larger HBM4 and HBM4E output by 2027

Samsung is reportedly increasing materials orders to expand high-bandwidth memory production, with plans to double current HBM4 and HBM4E manufacturing capacity by 2027. Capacity for HBM4 and HBM4E is expected to rise from around 20,000 wafers per month in 2026 to 50,000 wafers per month in 2027, according to SE Daily.

The estimate is based on demand for glass carriers, temporary glass panels placed over thin DRAM wafers to prevent warping or breakage before packaging. HBM production stacks many thin DRAM modules, and glass carriers keep wafers stable until packaging begins and the glass is removed. Because the process uses one glass carrier per wafer, orders offer a proxy for monthly wafer output.

Samsung’s total HBM production, including HBM3 and HBM3E, currently averages around 180,000 wafers this year and is expected to reach about 250,000 HBM wafers next year, with 80% allocated to HBM4 and HBM4E. Samsung began mass production of HBM4 on its sixth-generation 10 nm-class 1c node in February, while HBM4E customer samples are expected by mid-2026.