Nanya plans EUV DRAM expansion at Fab5A

Nanya Technology’s board announced on August 5 its largest investment program, centered on the Fab5A facility through 2026-2029. The plan covers 10 nm-class processes from 1b through 1e nodes and brings EUV lithography into the company’s DRAM roadmap. Nanya also raised its 2026 capital expenditures budget by 34%, with the added funds directed toward advance payments for equipment intended to keep Fab5A on schedule.

The production plan calls for wafer starts in the second half of 2027, followed by output of 30,000 wafers per month in 2028 and 35,900 in 2029. Maximum planned capacity is around 45,000 wafers monthly. Pilot production for the 1c node has already begun, while the 1d node remains under development and is expected to enter pilot production soon.

Nanya is benefiting from stronger DRAM pricing, especially gains in DDR4 contract prices. July revenue rose 49.3% month over month and 719.6% year over year. Customers include NVIDIA, Google, Microsoft, Intel, AMD, and Qualcomm, while long-term agreements reportedly cover about 50% of production capacity.