Intel and SK hynix discuss possible US DRAM production

Intel and SK hynix are in talks that could establish DRAM production lines in the United States for the first time, according to anonymous sources cited by Reuters. One option under discussion would have Intel collaborate with SK hynix through a joint venture, giving Intel access to memory IP technology while helping expand domestic DRAM supply.

A joint venture could ease pressure on the memory supply chain, with hyperscalers, fabless chip designers, and other customers expected to need more DRAM in the coming years. Another possibility would see SK hynix lease part of Intel’s Ohio facility, paying a premium while keeping the resulting output for itself.

The facility’s exact technology focus has not been determined, though the reported goal includes regular planar DRAM, HBM, and some NAND Flash-based storage products. Intel declined to comment on the rumor but said its Ohio investments are continuing. SK hynix said it has not finalized any decision or cooperation, while leaving open the possibility of future collaboration.