CXMT starts LPDDR6 risk production with 12.8 Gbps chips

CXMT has reportedly entered risk production for LPDDR6 memory, marking a step toward parity with Samsung, SK hynix, and Micron in manufacturing and technology development. Multiple reports say the company’s LPDDR6 memory will operate at speeds of up to 12.8 Gbps, above the base speed of LPDDR6 being 10.7 Gbps.

The new memory generation follows LPDDR5X, which could reach speeds of up to 10.7 Gbps when highly overclocked. CXMT’s first LPDDR6 chips from its fabs are said to reach 12.8 Gbps, with a 16 Gb capacity, equivalent to 2 GB. The memory IC is packaged in a package-on-package casing with about 1,295 pins in a ball grid array.

The current phase is described as a trial run before high-volume manufacturing, which could begin weeks or months after initial risk production. CXMT is already shipping LPDDR6 to customers for validation, and its manufacturing and construction progress could allow high-volume manufacturing to start in just a few weeks.